Silicon Carbide (SiC) Wafer markets remained mixed during Q2 2026, particularly for mainstream conductive 150 mm substrates, as Chinese production capacity expanded and suppliers competed aggressively for market share. The continued transition from 150 mm to 200 mm wafers also pressured pricing because larger substrates improve manufacturing economics by increasing the number of dies produced per wafer. North American market conditions reflected this pressure, alongside overcapacity, elevated inventories and weaker selling conditions. In Asia, increasing domestic substrate availability also restricted upward momentum despite continued investment in wafer-quality and defect-control technology. Downstream demand remained comparatively stronger from electric vehicles, AI data centers, renewable-energy systems and high-voltage power electronics, providing support for premium low-defect and automotive-qualified wafers. European manufacturers continued introducing higher-performance SiC power modules and data-center applications, supporting demand for advanced specifications even as standard substrate values weakened.
Analyst Insight
According to Procurement Resource, Silicon Carbide wafer prices are expected to remain broadly stable, with sufficient Chinese supply limiting gains while energy costs and industrial demand provide underlying support.
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Silicon Carbide (SiC) Wafer prices followed a mixed trend during Q1’26. In Asia, prices remained under pressure as Chinese 6-inch SiC substrate capacity expanded, increasing supplier competition and limiting price gains. However, production costs were supported by higher energy and freight expenses after the Iran war and Strait of Hormuz disruption. However, silicon availability remained relatively loose, as total silicon metal imports were estimated to be about ~50% higher than the previous year, which partly reduced upstream raw material pressure. In Europe and North America, prices stayed firmer due to higher manufacturing costs, 200-mm wafer transition expenses, and supply-chain risk. Downstream demand from EVs remained weaker than expected, but AI data centers, industrial power modules, and renewable-energy systems supported consumption.
Analyst Insight
According to Procurement Resource, Silicon Carbide (SiC) Wafer prices may remain mixed in the near term. Asia may face further pressure from capacity additions, while Europe and North America may stay firm due to energy costs and advanced wafer demand.
Silicon Carbide (SiC) wafers are advanced semiconductor substrates used for manufacturing high-performance power electronic devices. Compared with conventional silicon wafers, SiC wafers offer higher thermal conductivity, greater breakdown voltage, lower switching losses, and superior operation at high temperatures. These properties make them critical for electric vehicles, renewable energy systems, industrial power supplies, aerospace electronics, and next-generation power semiconductor applications.
SiC
Wolfspeed, Coherent Corp., SK Siltron CSS, Resonac Holdings, ROHM Co., Ltd.
SiC Wafer, Silicon Carbide Substrate, Silicon Carbide Semiconductor Wafer, SiC Substrate Wafer
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Silicon carbide wafers are produced using the Physical Vapor Transport (PVT) method. High-purity silicon carbide powder is sublimated at temperatures exceeding 2,000°C inside a crystal growth furnace. Vaporized species condense onto a seed crystal to form a single-crystal SiC boule. The boule is then sliced into wafers, followed by grinding, lapping, polishing, cleaning, and epitaxial preparation to achieve semiconductor-grade surface quality and crystallographic uniformity.
SiC wafers are primarily used in the production of power semiconductors including MOSFETs, Schottky barrier diodes, and power modules. Major end-use industries include electric vehicles, EV charging infrastructure, solar inverters, wind power systems, rail traction, industrial motor drives, aerospace electronics, and data centers. Their ability to operate at higher voltages and temperatures improves energy efficiency, reduces system size, and enhances overall device reliability.
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